Autor Tópico: Fuji patenteia sensor híbrido orgânico/CMOS  (Lida 373 vezes)

Malheiros

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Online: 22 de Dezembro de 2011, 08:48:56
O sonho de um sensor orgânico em escala inustrial está cada vez mais perto de se tornar realidade:

http://www.dpreview.com/news/2011/12/21/Fujfilmorganicsensor


"The Fujifilm sensor differs from exisiting CMOS and CCD designs in that it uses a photoelectric organic coating to convert light into electrons, rather than silicon photodiodes. The electrons produced by the organic layer are then 'read' by CMOS circuitry built underneath. Fujifilm's internal paper on the technology claims several advantages to the design. The first is that the organic layer can be coated across the entire sensor, making much more of the surface light-sensitive. This means there's no need for microlenses to redirect light onto specific light-sensitive regions. There's also no need to divide the photosensitive layer into individual photosites. Both these features could make the sensor less expensive to manufacture, Fujifilm's team says. The organic material's sensitivity to only visible light also avoids the need for a IR-filter in front of the sensor (silicon sensors are sensitive to IR light)."
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